RF 마그네트론 스퍼터링 방법으로 제작한 AlN 박막의 압전 특성에 관한 연구

초록

We have fabricated the AlN thin film by using RF magnetron sputtering method and investigated its piezoelectric property with the variation of Ar/N2 flow ratio and substrate temperature. when the Ar/N2 flow ratio is 10/10 (sccm) and substrate temperature is 400°C, the AlN thin film exhibits highest (002) orientation. The AFM and surface roughness (RMS) has been investigated as a function of Ar/N2 gas ratio and substrate temperature. Piezoelectric constant (d33) is measured by Pneumatic probe method. When AlN thin film is deposited at 10/10 (sccm) of Ar/N2 flow ratio and 400°C of substrate temperature, piezoelectric properties of AlN thin film are larger than other conditions.