얕은 접합 형성을 위한 저에너지 이온주입 공정을 위한 분자동력학 계산

초록

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics with a damage model has been employed while the kinetic Monte Carlo (KMC) diffusion model was used for the dynamic annealing between cascades. The distribution of dopants during the ion implantation was calculated from the MD approach. The calculation has been performed for B with energies down to 100eV and dose 1 x 1014 ions/cm2. The B, As, and Ge implant has been simulated with the energies of 0.5, 1, 2, 4, 8, and 16 keV and with dose 1 x 1014 ions/cm2 into Si <100>, respectively.