2D Quantum-Mechanical Modeling of FinFET

초록

In this paper, we report our quantum mechanical approach for the analysis of FinFET in a self-consistent manner. Calculated current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in terms of the suppression of the short-channel effect (SCE). The simulation of multi-fin FinFETs has been performed to analyze the high current drivability of multi-fin FinFETs. The electron densities of three-fin FinFETs are also demonstrated. To obtain quantum mechanical solutions, the iterative procedure comprises a first step, which calculates an electric potential in the nonlinear Poisson equation. With the potential value initiated, the program calculates a built-in potential from the nonlinear Poisson equation with an iteration scheme.