Two-Dimensional Quantum Mechanical Modeling for Strained Silicon Channel of Double Gate MOSFETs

초록

In this paper, a two-dimensional quantum mechanical model based on the self-consistent solution of the Poisson and Schr inger equations is reported. For the improvement of device characteristics, a novel structure of double-gate (DG) MOSFET, which is formed by a strained silicon channel using Si/Si0.75Ge0.25/Si, is proposed. Current-voltage (I-V) curves are demonstrated by varying the Si(1-x)Ge(x) contents. Transconductance (Gm) of strained Si channel is enhanced about 62.76% comparing with the result of unstrained silicon channel. To analyze the short channel effect of DG MOSFET, a sub-threshold swing, a threshold voltage roll-off and the drain induce barrier lowering (DIBL) were investigated. The difference in the calculated result between the classical and quantum mechanical approaches is also demonstrated in this presentation.