장시간 성장된 다이아몬드 막

초록

Synthetic diamond films have been deposited on the silicon(100) surface and molybudenum substrate using an microwave plasma enhanced chemical vapor deposition (MWPECVD) method. The effect of deposition time, surface morphlogy, X-ray diffraction pattern and Raman Scattering have been studied. The diamond film deposited on Mo substrate for 100 hours at 40 torr, H2-CH4-O2 gas system have been shown 1㎛/h of growth rate and good crystallization.