Multi-Functional Cross-Shaped Junction Device Applications Based on 2D van der Waals Nanomaterials

초록

Past few years, two dimensional (2D) van der Walls (vdWs) materials, such as graphene, MoS2, and other transition-dichalcogenides (TMDs) have been extensively studied as a promising future electronic semiconductor due to its remarkable electronic properties [1, 2]. Among these, palladium diselenide (PdSe2) is emerging member of 2D material family which shows a strong ambipolar semiconducting property with high electron and hole mobilities on field-effect transistors (FETs) application study. [3] In this work, we investigate 2D vdWs materials based heterogeneous junction properties, which consisting of representative TMDs and PdSe2, such as pn-diodes and junction field-effect transistors (JFET), and logic gate application. In order to find the best candidate TMDs, we first prepared and located thin PdSe2 flakes on a glass substrate by using mechanical exfoliation method under optical microscopy. And then, TMDs candidate materials, such as MoS2, WSe2, SnSe2 etc., were directly transferred onto targeted PdSe2 flake to form cross-shaped (perpendicular) junction devices in the same way. From the cross-shaped structure, we can achieve pn-diode (2-terminal passive device) and JFET (3-terminal active device) as well as more advanced logic application (4-terminal logic gate) at the same junction device.