Analysis of Breakdown and Destruction Behavior of Timer IC to High Power Electromagnetic Pulse threats

초록

In this paper, the influence of susceptibility on the malfunction effects of semiconducters is determined by pulse injection test. We compared the behavior of high power electromagnetic(HPEM) pulses on a semiconductor device using the techniques breakdown failure rate(BFR) and destruction failure rate(DFR). After the injection of the pulse, the phenomenon of the semiconductor element is separated into normal state, breakdown state and destruction state. Accordingly the effects on pulse repetition rate(PRR) and rise time on the device were analyzed.