Interface Engineering between 2D Transition Metal Dichalcogenides

초록

Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. In this presentation, the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers engineered through interfacial doping with Nb atoms will be presented. WxNb1?xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices.