Molecular Dynamics (MD) Calculation for Application of Low-energy Ion Implantation Process for Ultra-shallow Junction Formation

초록

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics with a damage model has been employed. The distribution of dopants during the ion implantation was calculated from the MD approach. The calculation has been performed for B with energies down to 100eV and dose 1×1014 ions/cm2. The B, As, and Ge implant has been simulated with the energies of 0.5, 1, 2, 4, 8, and 16keV and with dose 1×1014 ions/cm2 into Si <100>, respectively.