Impact of Hierarchical Dopant-Induced Microstructure on Thermoelectric Properties of p-Type Si-Ge Alloys Revealed by Comprehensive Multi-Scale Characterization

  • Jang, Kyuseon
  • Ko, Won-Seok
  • Son, Ji-Hee
  • Jang, Jeong-In
  • Kim, Bongseo
  • 외 12명
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초록

Dopant-induced microstructure in thermoelectric materials significantly affects thermoelectric properties and offers a potential to break the interdependence between electron and phonon transport properties. However, identifying all-scale dopant-induced microstructures and correlating them with thermoelectric properties remain a huge challenge owing to a lack of detailed microstructural characterization encompassing all length scales. Here, the hierarchical boron (B)-induced microstructures in B-doped Si80Ge20 alloys with different B concentrations are investigated to determine their precise effects on thermoelectric properties. By adopting a multi-scale characterization approach, including X-ray diffraction, scanning and transmission electron microscopy, and atom probe tomography, five distinctive B-induced phases within Si80Ge20 alloys are identified. These phases exhibit different sizes, compositions, and crystal structures. Furthermore, their configuration is comprehensively determined according to B doping concentrations to elucidate their consequential impact on the unusual changes in carrier concentration, density-of-states effective mass, and lattice thermal conductivity. The study provides insights into the intricate relationship between hierarchical dopant-induced microstructures and thermoelectric properties and highlights the importance of investigating all-scale microstructures in excessively-doped systems for determining the precise structure-property relationships. Hierarchical boron (B)-induced microstructures of BxSi80Ge20 alloys with broad length scales are fully identified with their all microstructure features. The B-induced microstructures lead to unusual variations in carrier concentration, density-of-states effective mass, and lattice thermal conductivity by their changes in distribution, volume fraction, and strain field around B-induced phases. Such intricate microstructure-property relationships determine the optimal doping concentration. image

키워드

atom probe tomographydopant-induced microstructuresilicon-germaniumthermoelectrictransmission electron microscopySILICON-GERMANIUM ALLOYFIGURE-OF-MERITTRANSPORT-PROPERTIESPHONON-SCATTERINGEFFECTIVE-MASSBORONPERFORMANCEPBTEPRECIPITATIONENHANCEMENT
제목
Impact of Hierarchical Dopant-Induced Microstructure on Thermoelectric Properties of p-Type Si-Ge Alloys Revealed by Comprehensive Multi-Scale Characterization
저자
Jang, KyuseonKo, Won-SeokSon, Ji-HeeJang, Jeong-InKim, BongseoVega-Parades, MiquelJang, HanhwiAllahyari, MaryamKim, Se-HoRyou, KenheeChae, DonghyeonPark, HailJung, Yeon SikOh, Min-WookJung, ChanwonScheu, ChristinaChoi, Pyuck-Pa
DOI
10.1002/adfm.202403785
발행일
2024-10
유형
Article
저널명
Advanced Materials for Optics and Electronics
34
40