이온주입된 크리스탈 구조에서의 결함 확산을 위한 동력학적 몬테카를로 시뮬레이션

초록

In this paper, we give an insight into the reasons for incorrectness in those conditions by using a simple interstitial, vacancy recombination model. To verify the density and mass or energy effect, the used conditions are 1%, 0.1% defects density and Si-interstitials peaks at 100 200respectively. Additionally, we investigate the model for Boron diffusion at low temperatures with kick-out mechanism including self-interstitials (I) and vacancies (V). The results are coincident with the previous work in the same conditions, at 1300K, 20min annealing. The used simulation scheme is Kinetic Monte Carlo (KMC), which will be a powerful numerical method for the dopants diffusion in sub-micron process modeling.