The microsture and physical properties of ZnO:Al films deposited on porous silicon by reative cosputtering from separate ZnO and Al targets

초록

Al doped ZnO (AZO) films were deposited on porous silicon (PS) as well as on glass substrates by reactive rf-cosputtering from two targets of ZnO and Al. Effects of rf-power on the structural, electrical, optical and photoluminescence (PL) properites were studied. It was found that the columnar structure became more dominant and the degree of(0002) preferred orientation increased as the rf-power. The PL band shifted to the high energy region and the intensity became stable. Also we show that this transparent oxide does not degrade the skeleton of the PS and enhance the PL intensity. The AZO films show more than 80% of transmittance in the visible light region.