Tunable coercive voltage and polarization of HZO through field-induced phase transitions

Han, Changhyeon; Kwak, Been; Kwon, Ki-Ryun; Jeong, Soi; Kim, Jeong-Han; Choi, Rino; Kwon, Daewoong

doi:10.1016/j.mssp.2025.109615

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Tunable coercive voltage and polarization of HZO through field-induced phase transitions

Han, Changhyeon;
Kwak, Been;
Kwon, Ki-Ryun;
Jeong, Soi;
Kim, Jeong-Han;
... Choi, Rino;
외 1명

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초록

We explore the tunable ferroelectric properties of HfxZr1-xO2 (HZO), particularly focusing on coercive voltage (VC) and remnant polarization (Pr) through controlled cycling voltage. The findings reveal a crucial relationship between the ferroelectric properties and the proportion of the ferroelectric phase. The interaction between the ferroelectric and non-ferroelectric phases played a significant role in shaping the overall ferroelectric behavior. By leveraging the field-induced phase transitions, HZO properties could be finely tuned, which provides key insights for applications requiring low operating voltages and optimized polarization switching. These results pave the way for the development of high-performance and reliable ferroelectric devices.

키워드

Ferroelectric; HfxZr1-xO2; Metal-ferroelectric-metal (MFM); Phase-transition; Wake-up; THIN-FILMS; FERROELECTRICITY; LAYER; ZRO2

제목: Tunable coercive voltage and polarization of HZO through field-induced phase transitions

저자: Han, Changhyeon; Kwak, Been; Kwon, Ki-Ryun; Jeong, Soi; Kim, Jeong-Han; Choi, Rino; Kwon, Daewoong

DOI: 10.1016/j.mssp.2025.109615

발행일: 2025-08-15

유형: Article

저널명: Materials Science in Semiconductor Processing

권: 195