The structure and optical properties of N-type and P-type porous silicon

초록

The structure and optical properties of n-type and p-type porous silicon (PS) prepared by the chemical etching in the light and the dark, respectively, are reported in this paper. Micro-structural features of the samples are mainly investigated by SEM, AFM, XRDGI techniques. Also, their optical properties are investigated by photoluminescence (PL) and Fourier transform infrared absorption measurements. In the n-type PS, the room temperature photoluminescence is observed in a visible range from 500 nm to 650 nm in contrast to that in the blue region (400 650 nm) in p-type PS. Further, semi-transparent Cu films in thickness range of 40 nm are deposited by rf-magnetron sputtering on PS to investigate the I-V characteristics of the samples.