Two-Dimensional Atomic-Layered FET Utilizing Metallic-Semiconducting TMDs Heterostructure

초록

Enhanced junction reliability and long-term stability with TMDs-based FET are attracting attention in two-dimensional(2D) nano-scale electronic devices. We investigate heterostructures of compositionally and electronically different 2D atomic layers of TMDs to improve contact properties of 2D metal-semiconductor heterojunction. Through interfacial doping with niobium atoms, we engineered composition of transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers. This van der Waals junction with WxNB1-xSe2 mixed transition regions considerably lower the potential barrier of the heterojunction and enhancing the performance of the corresponding 2D TMDs-based FET devices. Also, it has atomically sharp interfaces, exhibiting long hot-carrier lifetimes (75,296 s) of 78 times longer than Pd/WSe2 metal-semiconductor junctions. The fabrication of controllable composition alloyed 2D junctions between dissimilar atomic layers could be a significant progress approaching electrically reliable 2D nanomaterial-based electronic devices.