Electrical Properties of Polyvinylidene Fluoride Films Prepared by Physical Vapor Deposition Method

초록

Poly Vinylidene Fluoride thin films were prepared by using a physical vapor depositon and high electric field applying method. Thin films were studied with DSC, FT-IR, X-ray diffraction and electrical conduction measuring system. The melting point of PVDF thin film increases with increasing substrate temperature. It is identified by FT-IR that the crystalline phase of a type PVDF is transformed to B type with increasing electric field applied during preparation. It is foung that the crystallinity of PVDF thin films increases from 49.8% to 67% with increasing substrate temperature from 30 to 80. The absortion current of a and B type PVDF increases with increasing the electric field applied under measurement and the current increment of B type is higher than of a type. The ion hopping distance, derived from a relation between current density and measuring temperature, increases from 51.5A to 153.5A with increasing temperature. From above results, the conduction mechanism of PVDF thin film is estimated as ionic