Nanostructural and photoluminescence characteristics of p-type porous silicon prepared by anodic etching

초록

In this study, we investigated the nanostructural and photoluminescence features of p-type nanoporous silicon. Samples were prepared by anodic etching techniques in HF solutions, depending on various process parameters, including current density, etching time and oxidation conditions. The surface morphology, structural and chemical features of the nanoporous silicon were investigated by AFM, SEM, XPS, IR spectroscopy and HRXRD in this study.