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A High-Side nLDMOS for 0.35 μm BCD Technology with Improved Breakdown Characteristics

  • WON TAEYOUNG
제목
A High-Side nLDMOS for 0.35 μm BCD Technology with Improved Breakdown Characteristics
저자
WON TAEYOUNG
학회명
30th International Conference on the Physics of Semiconductors
개최지
Hall B2, COEX, Seoul, Korea
학회 개최일
2010-07-25 ~ 2010-07-30

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