The Dry Laser Cleaning of Photoresist Residus on Si and ITO substrate

초록

The clleaning of photoresist residus on Si and ITO substrate is necessary in electronics device fabrication in order to improve the device performance and manufacturing efficiency. This study is about the laser cleaing of the photoresist residue (AZRFP230K2) on the substrates being able to substitute conventional photoresist ashing equipment. The laser cleaning effect of Q-switched Nd:YAG laser at 266 and 532 nm in order to remove the photoresist residues on Si and ITO substrate was invesigated with regard to laser fluence and wavelength. The cleaning efficiency for the residues on Si substrate was higher than that of ITO at the same laser fluence and shot for both 266 and 532 nm. Much more effective cleaning of the residues on the substrate can be done with flowing assistant inert N2 gas during the laser cleaning precess.