A Comprehensive Optical Analysis on Organic Light-Emitting Transistors

초록

Recently, Organic light-emitting transistors (OLETs) have shown their outstanding electrical performances such as high-mobility, fast-switching, and low-power by developing a crystalline thin film with robust organic semiconductors. However, few devices have achieved outstanding optical performance as well. In this work, a comprehensive optical simulation is studied not only to understand the optical energy losses in OLETs but also to realize enhanced EQEs of OLETs. From the optical simulation, it is confirmed that the main optical energy losses take place via waveguide mode in OLETs. The simulation results indicate that the energy losses in OLETs can be appropriately reduced by adjusting a gate material and a refractive index of transporting layer. This allows us to achieve a maximum achievable EQE as high as 45% in red-emitting phosphorescent OLETs.