공정변수에 의한 Ni/Cr/Al/Cu계 박막의 전기적 특성

초록

We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-18wt%Cr-4wt%Al -4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400℃ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300℃ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film