Microwave Plasma CVD에 의한 다이아몬드 박막의 성장

초록

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including CH4 conentrations, Oxygen additions, Operating pressure, deposition time, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the CH4-H20 mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure and time, the growth rate and crystallinity were increased simultaneously.