DC Reactive Magnetron Sputtering with Ion Beam Assistance for Oxide Films

  • CHANG KWON HWANGBO

초록

Titanium oxide films were deposited by a reactive DC magnetron sputtering of a conventional cylindrical target with oxygen ion beam assistance from a RF ion source at low pressure and long substrate-target distance. In a conventional reactive DC magnetron sputtering, an oxygen gas reacts with a target surface and often forms an insulting oxide layer on the target surface during a reactive sputtering, which may result in arcing on the target surface and poisoning of it. In the present work, a RF ion source for an oxygen ion beam was installed to bombard an oxide film growing in a DC magnetron sputtering chamber and the substrate-to-target distance was increased. A reactive oxygen gas was introduced to an ion source and near a substrate while an Ar gas was flown above the sputtering target. Thus the target is not exposed directly to the oxygen gas and ion beam. A systematic study was made to examine the optical and structural properties of titanium oxide thin films prepared by an ion-beam-assisted DC sputtering using an in-situ ellipsometer, XRD, XPS and AFM. An investigation on the effect of ion beam parameters and sputtering conditions on oxide films will be reported.

제목
DC Reactive Magnetron Sputtering with Ion Beam Assistance for Oxide Films
저자
CHANG KWON HWANGBO
학회명
Surface Modification of Materials by Ion Beams (SMMIB 2001)