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초록
In this paper, we report the three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to silicon simulate three-dimensional TED redistribution of dopants in the silicon, the defect distributions after ion implantation was calculated by plus one model, followed by finite element numerical solver for thermal annealing.
- 제목
- Three-dimensional Modeling of The TED due to Implantation Damage
- 제목 (타언어)
- 이온 주입에 따른 결함에 의한 과도 증속 확산의 3차원 모델링
- 저자
- WON TAEYOUNG
- 학회명
- Technical Digest of 1997 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 97)