Bandgap Tuning and Quenching Effects of In(Zn)P@ZnSe@ZnS Quantum Dots

초록

InP quantum dot (QDs) have attracted researchers’ interest due to their applicability in quantum dot light-emitting displays (QLED) or biomarkers for detecting cancers or viruses. The surface or interface control of InP QD core/shell has substantially increased quantum efficiency, with a quantum yield of 100% reached by introducing HF to inhibit oxide generation. In this study, we focused on the control of bandgap energy of quantum dots by changing the Zn/(In+Zn) ratio in the In(Zn)P core. Zinc incorporation can change the photoluminescent light colors of green, yellow, orange, and red. Diluting a solution of as-synthesized QDs by more than 100 times did not show any quenching effects by the Förster resonance energy transfer phenomenon between neighboring QDs.

키워드

InPquantum dotQLEDcore/shellFRET
제목
Bandgap Tuning and Quenching Effects of In(Zn)P@ZnSe@ZnS Quantum Dots
저자
이상연박수현BYUN GYUNGSU김창열
DOI
10.4150/jpm.2024.00003
발행일
2024-06
유형
Y
저널명
Journal of Powder Materials
31
3
페이지
226 ~ 235