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Bandgap Tuning and Quenching Effects of In(Zn)P@ZnSe@ZnS Quantum Dots
- 이상연;
- 박수현;
- BYUN GYUNGSU;
- 김창열
초록
InP quantum dot (QDs) have attracted researchers’ interest due to their applicability in quantum dot light-emitting displays (QLED) or biomarkers for detecting cancers or viruses. The surface or interface control of InP QD core/shell has substantially increased quantum efficiency, with a quantum yield of 100% reached by introducing HF to inhibit oxide generation. In this study, we focused on the control of bandgap energy of quantum dots by changing the Zn/(In+Zn) ratio in the In(Zn)P core. Zinc incorporation can change the photoluminescent light colors of green, yellow, orange, and red. Diluting a solution of as-synthesized QDs by more than 100 times did not show any quenching effects by the Förster resonance energy transfer phenomenon between neighboring QDs.
키워드
- 제목
- Bandgap Tuning and Quenching Effects of In(Zn)P@ZnSe@ZnS Quantum Dots
- 저자
- 이상연; 박수현; BYUN GYUNGSU; 김창열
- 발행일
- 2024-06
- 유형
- Y
- 저널명
- Journal of Powder Materials
- 권
- 31
- 호
- 3
- 페이지
- 226 ~ 235