Photo-crosslinkable Polymer-Blend Gate-Dielectrics for High-Performance P, N-type ORganic Field-Effect Transistors

초록

In present study, we reported the fabrication of photo-crosslinkable polymer blend gate-dielectrics consisting of two insulating polymers with distinct properties, and the optimization of the qualities of the blend gate-dielectric to maximize OFET performances. First, photo-crosslinking capability of the polymer blend was investigated because this property enabled the gate-dielectric to obtain solvent-resistance, electrical strength, and photo-patternability. In addition, we characterized variation of surface properties of the blend gate-dielectric according to the change of the blending ratio of the separate polymers. Based on the investigation on dielectric surface properties, we inspected the effects of structural and morphological features of the semiconductor layer grown on the blend gate-dielectrics (e.g., molecular ordering, crystallinity, size and boundary of the grain) on the OFET performances. Finally, we considered the device instability, such as hysteresis behaviour, of the OFETs employing blend gate-dielectrics, and confirmed the usefulness of our polymer blend as the gate-dielectric in the N-type OFET.