Quantum Mechical Simulation of Multiple-Channel FET

초록

Recently, a various types of FinFETs have attracted a great deal of attention due to their potential as a next- generation FET structure with immunity to short channel effect and high compatibility with conventional device manufacturing process [1, 2]. The conventional FinFET, however, has a shortcoming in that a sophisticated multi-fin layout is required for enhancing the drive current. Therefore, McFET (Multi-channel FET) [3] is a good alternative choice because it can be fabricated without relying on the lithographical limit for active patterning.