Switching Properties of the Pb0.9La0.1TiO3 Thin Film

초록

Switching properties of the Pb0.9La0.1TiO3 thin film have been measured. As the external input pulse voltage increases from 2 to 5V, the switching time decreases from 0.49 to 0.12us. The activation energy (Ea) is obtained as 209kV/cm from the relation between the switching time and the applied pulse voltage. The switched charge densities at 5V obtained from the hysteresis loop and the polarization switching are 11.69 and 13.02uC/cm2, respectivesly, which agree relatively well with each other and show a difference of 10%. As the top electrode area increases from 3.14x10-4 to 5.03x10-3cm2, the switching time increases from 0.12 to 1.88us. As the load resistance increases from 50ohm to 3.3kohm, the switching time increases from 0.12us to 9.7us. These switching characteristics indicate that Pb0.9La0.1TiO3 thin film can be well applied in nonvolatile memory devices.