몬테 카를로 방법을 이용한 극저 에너지 이온 주입

초록

The rapid progress of CMOS process technology has required the accurate moleling of ultra-low energy ion implantation and the use of the Monte-Carlo ion implantation simulation method, with the disadvantage of very long simulation time especially for three-dimentional applications. In this paper a new method for an accurate and CPU time efficient 3D simulation of ion implantaion and a low energy Monte-Carlo ion implantation model are suggested. The dopant and damage profiles show very good agreement with SIMS and RCS data, respecticely, and we have calculated the 3D Monte-Carlo ion implantatuin simulation into the topographically complex structure.