Microstructural Change By Thermal Variation Of Cu Electrodeposited In Electrolytic Copper

초록

Copper sulfate plating was performed using DC and reverse pulse conditions, and the electro plating layer formation behavior and grain growth behavior by the pulse conditions were confirmed. The appearance of the electro plating layer was different depending on the pulse condtions. The plating layer fabricated by DC had a rough surface and higher roughness than the plating layer made with reverse pulse. The normal shapes grains were obeserved in electro plating layer fabricated by DC, and its diameter incresed as the current density decresaed. Meanwhile, the plating layer produced by reverse pulse had huge column-shaped crystal grains. It was caused that it was caused by the ratio (total potential, Javg/CMeZ+) of the average current density (Javg) and metal ion concentration (CMeZ+) by current density conditions and the amount of internal stress was proportinal to total potential conditons. Therefore, DC plating layer fabricated in high total potential conditions was consisted of small grains with high internal stress, and revers pulse plating layer was formed with large grains. For the same reason, the DC plating layer had a lower recrystallization temperature than the reverse pulse plating layer, and due to this, larger crystal grains were observed after heat treatment.