Role of thin insertion layer on the optical properties of InGaAS quantum dots

초록

The control of emission wavelength from InGaAs self-assembled quantum dots is crucial for the optical device application such as laser diode. The use of InxGa1-XAs(0≤x≤0.3)cap layer has been reported1) for InGaAs/GaAs QDs structure to obtain a 1.3 ㎛–emission wavelength. In this work, we have investigated the effects oh thin insertion layers on the optical properties of InGaAS quantum dots. The 0.6~10 ㎚ thick insertion layers of AlGaAs and InGaAs were adopted to the MOCVD(metal-organic chemical vapor deposition)-grown quantum dots. From the measurement of photoluminescence the emission wavelength was shifted to longer side as the the thickness of InxGa1-xAs insertion layer increased. It was found that the 4.5 ㎚ thick insertion layer was enough to obtain 1.3 ㎛–emission wavelength via the insertion layer on quantum dots system will be primarily elucidated and compared for both InGaAs and AlGaAs insertion layers.