Binary ferroelectric oxides for future computing paradigms

초록

With the exponential increase in the quantity of information to be stored and processed, an important issue that must be urgently resolved for the advancement of modern society is to decrease the power consumed by semiconductor devices with high operation speeds. Logic-in-memory (LiM) and neuromorphic devices were proposed as promising solutions to improve the operation speed and energy efficiency by merging logic and memory devices that are classically separated in von Neumann computing systems. Numerous emerging memories were proposed for the LiM and neuromorphic devices of which ferroelectric memories were considered to be one of the most promising candidates since the discovery of unexpected ferroelectricity in complementary metal-oxide-semiconductor compatible binary oxides such as doped HfO2. Therefore, a review of binary ferroelectric oxides, from materials to devices, for logic-memory hybrid systems is presented herein.

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