Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing

초록

Wakeup-free and endurance-robust HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) was fabricated on a silicon-on-insulator substrate. After a high-pressure forming gas annealing as the last alloy step, the performance and endurance of the FeFETs were significantly improved by trap states reduction, polarization enhancement, and wake-up elimination. As the result, the FeFETs show superior endurance exceeding 10(10) cycles and robust retention behavior at program/erase biases of +/- 3.5V and pulse width of 100 ns. These results indicate that appropriate thermal treatment for the interlayer and ferroelectric material could substantially improve FeFET performance and reliability.

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