GiGabit급 Optical Lithography를 위한 Strong PSM과 Aberration 효과

초록

In optical lithography, the minimum feature size of the most advanced ULSIs is already smaller than the wavelength of DUV exposure light, and it is very difficiult to delineate patterns smaller than the wavelength over complex substrates with reduction of DOF. An alternating phase shifting mask has been widely used for increasing the resolution and DOF. In this study, several aerial images of the strong PSM that has dual-trenches have been simulated with AIMS and LG-OLiS for comparison and verification.