450mm 웨이퍼 플라즈마 반응 챔버의 최적 구조를 위한 유체해석 시뮬레이션

초록

Computational fluid dynamics(CFD) simulation of the semiconductor processing equipment is used to study the complex flow pattern. In this paper, flow distribution of the neutral gas flow pattern in the wafer surface is calculated by CFD simulation. Velocity vectors, flux of neutral O2 gas molecules above the wafer and overall flow patterns from gas inlet to chamber exhaust are studied in terms of the distance between wafer and baffle. Reactors of photoresist strip are studied by this simulation with chamber pressure of 2Torr and gas flow rate of 6,600sccm. The simulation showed that the reactant flux distribution over 450 mm wafer surface was more uniform when the distance between gas inlet baffle and wafer stage was 70mm. Therefore, when the distance between the gas inlet baffle and wafer stage is chosen to be 70mm, it can be optimized chamber structure.