Surface crystallization effects on tellurium oxide thin films for low-power complementary logic circuit applications

초록

Van-der-Waals-structured tellurium (IV) has demonstrated its potential as a promising building block for complementary logic device due to its superior electrical and optoelectronic features. Here, we demonstrated the novel approach for developing high-performance tellurium oxide (TeOX) X ) thin film through TeOX X formation and surface crystallization (SC). The crystalline structures and chemical bindings of the TeOX X surfaces were carefully engineered by time- and temperature-dependent UV-ozone treatment and ALD-grown-Al2O3-assisted 2 O 3-assisted crystallization. The huge enhancement of device performance was achieved in the optimized SC-TeOX X transistor, especially high on-off current ratio of 2.19 x 106, 6 , which can be ascribed to the synergistic effects of TeOX X formation and SC process resulting in the enlarged bandgap, strong valence band edge localization, and the improved crystallinity. The performance enhancement mechanism was systematically studied by constructing SC-TeOX X transistor with different TeOX X region, where the TeOX X creation in both Te channel and source/drain electrode regions dramatically improved performance owing to the decreased contact resistance and enhanced charge transport. Consequently, we achieved the high-performance low-power complementary logic circuits with SCTeOX X transistors, even reaching the maximum gain of 67.9 and low static power of 0.5 nW. Thus, this work demonstrates the great potentials of SC-TeOX X transistor for developing advanced low-power complementary logic circuits.

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