All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium-Gallium-Zinc Oxide Channel

Jeong, Soi; Han, Changhyeon; Yim, Jiyong; Kim, Jeonghan; Kwon, Ki Ryun; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

doi:10.1109/LED.2023.3260860

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All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium-Gallium-Zinc Oxide Channel

Jeong, Soi;
Han, Changhyeon;
Yim, Jiyong;
Kim, Jeonghan;
Kwon, Ki Ryun;
... Choi, Rino;
외 4명

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16

초록

Double-Gate ferroelectric thin-film transistor (DG-FeTFT) with an amorphous indium-gallium-zinc oxide (alpha-IGZO) channel is demonstrated. DG-FeTFT is composed of all-sputter-deposited thin films and the bottom FeTFT (FeTFTbottom) and top conventional TFT (TFTtop) are com-bined into a single device that shares the alpha-IGZO channel and source/drain. Through the separation of read (by TFTtop) and program/erase (by FeTFTbottom) operations, it is confirmed that wide memory window (MW) of similar to 5V is obtained with an MW amplification and read disturbance can be significantly improved. Furthermore, it is verified that faster program/erase speeds are achievable by mod-ulating the gate voltage of TFTtop, leading to the improved endurance characteristics.

키워드

HfO2-based ferroelectric memory; IGZO ferroelectric thin-film transistors (FeTFT); double-gate FeTFT; VOLTAGE

제목: All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium-Gallium-Zinc Oxide Channel

저자: Jeong, Soi; Han, Changhyeon; Yim, Jiyong; Kim, Jeonghan; Kwon, Ki Ryun; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

DOI: 10.1109/LED.2023.3260860

발행일: 2023-05

유형: Article

저널명: IEEE Electron Device Letters

권: 44

호: 5

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