Achieving Improved Grain Alignment in CVD-Grown WSe2 Monolayers via Precursor Flux Control

초록

Transition metal dichalcogenides (TMDs) are promising candidates for next-generation electronic and optoelectronic devices due to their high mobility, tunable band gaps via compositional variation. While chemical vapor deposition (CVD) approach enables the production of large-area monolayers of TMDs, achieving highly crystalline TMDs with minimal defects remains a challenge. In particular, grain boundaries degrade electrical mobility, thus necessitating controlled lattice formation through strategies like aligned growth.