FRAM 소자용 PZT 박막의 강유전특성에 관한 연구

초록

In this study, PZT thin films were fabricated using sol-gel processing onto Si/SiO2/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at 450'C, 650'C by rapid thermal annealing (RTA). The prefered orientation of the PZT thin films were observed by X-ray diffraction (XRD), and scanning electron microscopy (SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than 1e(-8) A/cm2. It is concluded taht the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.