Physical Unclonable Functions Using Ferroelectric Tunnel Junctions

  • Kim, Sihyun
  • Lee, Kitae
  • Oh, Min-Hye
  • Lee, Jong-Ho
  • Park, Byung-Gook
  • 외 1명
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초록

We propose physical unclonable function (PUF) operations using ferroelectric tunnel junctions (FTJs) and verify the effects of their dimension scaling on the PUF. First, device-to-device variation and within-device reproducibility were measured from the FTJs with various dimensions, which were to be embedded to 4 x 4 FTJ cross-point array. Then, to obtain inter- and intra-chip fractional hamming distances (HDs), intra-chip reproducibility and inter-chip uniqueness were extracted from the FTJ array simulations. As a result, it is revealed that the more stable PUF operations are achievable in the cross-point array with scaled FTJs since inter-device variation is deteriorated much more seriously by the variation of domain number in the ferroelectric layer than intra-device variation.

키워드

Semiconductor device measurementPhysical unclonable functionCryptographyReproducibility of resultsTemperature measurementSize measurementJunctionsCryptographic primitiveferroelectric tunnel junction (FTJ)hafnium zirconium oxide (HZO)physical unclonable function (PUF)FILMS
제목
Physical Unclonable Functions Using Ferroelectric Tunnel Junctions
저자
Kim, SihyunLee, KitaeOh, Min-HyeLee, Jong-HoPark, Byung-GookKwon, Daewoong
DOI
10.1109/LED.2021.3075427
발행일
2021-06
유형
Article
저널명
IEEE Electron Device Letters
42
6
페이지
816 ~ 819