Growth of SiGe/Si multiple quantum wells by ultra-high-vacuum electron cyclotron resonance chemical vapor

초록

Si1-xGex is a promising alloy system for the realization of Si-based novel devices such as heterojunction bipolar transisttor (HBT), modulation-doped field effect transistro (MODFET), and infrated optoelectronic devices. Epitaxial growth of Si1-xGex on si requires low temperature growth to suppress three-dimensional growth and misfit strain relaxation. Various low temperature growth techniques were reported, and the successful high-speed operation of a SiGe HBT was demonstrated. Growth temperature can be further lowered when ions are used in a proper way. Furthermore, the introduction of low-energy ions may affect the heteroepitaxial growth mode of Si1-xGex on si. Hydrogen ions can be also used to clean the Si surface prior to Si1-xGe growth to obtain better interfaces.