Adlayer formation in low-pressure chemical vapor deposited graphene and its exploitation for creating PUF surfaces

  • Lee, Sangsun
  • Kim, Dong Hwan
  • Kim, Jiseon
  • Ye, Jongpil
Citations

WEB OF SCIENCE

1
Citations

SCOPUS

1

초록

We investigate adlayer formation in low-pressure chemical vapor-deposited graphene and show that graphene can be grown to have adlayer morphologies that are useful for creating physical unclonable authentication tags with large encoding capacities. The number density and size of the adlayers significantly increase when graphene is grown on electrochemically reduced rough surfaces. They are widely varied by controlling the methane partial pressure, growth temperature, and surface oxidation states of the Cu foils. The uniformity and uniqueness of the optimally prepared 256-bit long authentication keys are extremely close to 0.5, affording an encoding capacity of 8.23 x 10(62).

키워드

graphenephysically unclonable functionchemical vapor depositionGROWTHCUNUCLEATIONMORPHOLOGYSUBSTRATE
제목
Adlayer formation in low-pressure chemical vapor deposited graphene and its exploitation for creating PUF surfaces
저자
Lee, SangsunKim, Dong HwanKim, JiseonYe, Jongpil
DOI
10.35848/1882-0786/acde41
발행일
2023-07-01
유형
Article
저널명
Applied Physics Express
16
7