Destruction Characteristics of Semiconductor device By PRF and Injected Power

초록

After the high-power electromagnetic pulses were investigated, Electromagnetic pulses have been used in many applications, whereas the danger of war and terrorism caused by IEMI is growing. ? In this paper, with a Pulse Injection test on the semiconductor device, vulnerabilities of the semiconductor device due to the pulse repetition rate and the injection power were analyzed. ? As a result, destruction power was dissimilar at the low voltage under the various pulse repetition frequencies. ? On the other hand, at the higher voltage than 700V the experiment showed a tendency to converge on about 1.0uW.