Kinetic Monte Carlo study on transient enhanced diffusion posterior to amorphization process

초록

We report our theoretical investigation on the suppression of boron diffusion in the silicon substrate posterior to PAI (pre-amorphization implant). We numerically investigated the defect-generating behavior of silicon atoms and the subsequent effect on the transient enhanced diffusion of boron as a new species for pre-amorphization implant (PAI). Our kinetic Monte Carlo (KMC) simulation revealed that Si-PAI produces more interstitials than the case of Ge-PAI whilst Ge-PAI makes interstitial move further up to the surface than the Si-PAI case during the annealing process, which results in the suppression of the boron transient enhanced diffusion (TED).