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Silylation Photo resist 공정과 Enhanced-Inductively Coupled Plasma (E-ICP)
The Silylation Photo Resist Process and the Enhanced-Inductively Coupled Plasma (E-ICP)
초록
The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25㎛ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP. The etch rate and the microloading effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.
- 제목
- Silylation Photo resist 공정과 Enhanced-Inductively Coupled Plasma (E-ICP)
- 제목 (타언어)
- The Silylation Photo Resist Process and the Enhanced-Inductively Coupled Plasma (E-ICP)
- 저자
- O BEOM HOAN
- 학회명
- Proceedings of IEEK Summer Conference '99