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Mobility degradation mechanism of MOSFET with contemporary La-incorporated-HfO2 gate dielectric using cryogenic measurement
- 제목
- Mobility degradation mechanism of MOSFET with contemporary La-incorporated-HfO2 gate dielectric using cryogenic measurement
- 저자
- RINO CHOI
- 학회명
- 제20회 한국반도체학술대회