An extremely low-power-consumption reconfigurable two-dimensional tellurene artificial synapse for bio-inspired wearable edge computing

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초록

Neuromorphic electronics are gaining significant interest as components of next-generation computing systems. However, it is difficult to develop flexible neuromorphic electronics for implementation in various edge applications such as bio-implantable electronics and neuroprosthetics. In this study, we present a reconfigurable 2D tellurene (Te) artificial synaptic transistor on a flexible substrate for neuromorphic edge computing. Single-crystalline 2D Te flexible synaptic transistors exhibit potentiation and depression modulated by gate pulses with an extremely low power consumption of 9 fJ, 93 effective multilevel states, excellent linearity and symmetry, and an accuracy of 93% in recognizing the Modified National Institute of Standards and Technology (MNIST) patterns. Furthermore, it was observed to be a flexible synaptic transistor with outstanding gate tunability and endurance characteristics, even under a 2% curvature in both the concave and convex states. We believe a robust 2D Te flexible artificial synapse will effectively function as a building block for wearable neuromorphic edge computing applications. We fabricated a reconfigurable two-dimensional tellurene artificial synaptic transistor on a flexible substrate for bio-inspired wearable neuromorphic edge computing, showing an extremely low power consumption of 9 fJ and an impressive accuracy of 93% in recognizing MNIST patterns.

키워드

LAYER MOS2; PIEZOELECTRICITY; TRANSISTORS; DEVICE; OXIDE; INTELLIGENCE; TRANSPARENT; MEMRISTOR; MEMORY
제목
An extremely low-power-consumption reconfigurable two-dimensional tellurene artificial synapse for bio-inspired wearable edge computing
저자
You, Bolim; Yoon, Jeechan; Kim, Yuna; Yang, Mino; Bak, Jina; Park, Jihyang; Kim, Un Jeong; Hahm, Myung Gwan; Lee, Moonsang
DOI
10.1039/d4tc00530a
발행일
2024-05
유형
Article
저널명
Journal of Materials Chemistry C
권
12
호
18
페이지
6596 ~ 6605