In situ crystallization of InGaZnO thin film by spray pyrolysis for high-performance thin film transistors

초록

InGaZnO (IGZO) is a mainstream oxide semiconductor widely used in display technology. However, a high mobility is essential to expand the application of IGZO thin-film transistors (TFTs) beyond display applications. Crystallization of IGZO is an effective strategy to enhance mobility by reducing atomic disorder and improving carrier transport. We report the in situ crystallization of IGZO thin film by spray pyrolysis at a substrate temperature of 425 degrees C without any subsequent crystallization process. The fabricated Crystalline IGZO (c-IGZO) TFT exhibited high saturation mobility of 50.12 cm2/Vs, and excellent stability under positive bias temperature stress compared to its amorphous counterpart. Furthermore, an inverter circuit fabricated based on c-IGZO TFTs demonstrated a high voltage gain of 62. Therefore, c-IGZO TFTs by spray pyrolysis are promising for low-cost and high-performance electronic applications.

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