Morphological engineering for constructing GaN-decorated SnO2 nanopolygons with enhanced sensitivity and selectivity towards NO2 gas

초록

In this study, we synthesized SnO2 nanowires (NWs) using a vapor-liquid-solid growth mechanism. Prior to the GaN-deposition on SnO2 NWs, high-temperature etching using a strong HCl acid changed the SnO2 morphology to nanopolygons (NPGs). GaN nanoparticles (NPs) were then decorated onto the SnO2 NPGs using a self-designed vertical hydride vapor-phase epitaxy technique for 0-30 s. The characterization studies revealed the formation of GaN-decorated SnO2 NPGs. Subsequently, gas sensors were fabricated. At 300 degrees C, pristine SnO2 NW sensor revealed a response of 56.1-10 ppm NO2 gas, whereas all GaN-decorated SnO2 NPG gas sensors achieved higher detection response. Moreover, the sensor with the GaN deposition time of 20 s exhibited the highest response of 111.1-10 ppm NO2 gas. The optimized sensor exhibited high selectivity, good repeatability, and long-term stability. Enhanced NO2 sensing performance of optimized sensor was related to the high specific surface area (29.7 m2/g), formation of n-n GaN/SnO2 heterojunctions and sufficient GaN decoration time, where sufficient amounts of GaN NPs were deposited on SnO2 NPGs. Therefore, this study demonstrated the promising sensing capability of GaN-decorated SnO2 NPGs, which can be regarded as a novel sensing system to realize highly sensitive and selective NO2 gas sensors.

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