Simulation of Low-energy Ion Implantation Process by Atomistic Modeling

초록

In this paper, we report the formation of defects during ion implantation by employing a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics is employed while the Kinetic Monte Carlo (KMC) diffusion model is used for an annealing effect between cascades. To analyze the formation of defects during ion implantation, the B implantation is performed with the energy of 15keV and the dose of 1x1015ions/cm2. And then, the experimental data for B implant with the energy of 2keV, the dose of 1x1014ions/cm2 and 1x1015ions/cm2, and the dose rate of 1x1012ions/cm2 sec both with and without taking the annealing effect into account.